DocumentCode
1032098
Title
Dual-gate silicon permeable-base transistors built on LPVPE-grown material
Author
Gruhle, A. ; Vescan, L. ; Beneking, H.
Author_Institution
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Volume
23
Issue
9
fYear
1987
Firstpage
447
Lastpage
449
Abstract
Permeable-base transistors have been fabricated on epitaxial silicon layers grown by low-pressure vapour-phase epitaxy. Reactive ion etching is used to form the grooved-etched transistors with 0.5-2 ¿m-wide channels. The emitter geometry permits self-aligned formation of two separate base electrodes which can be useful in mixer applications. Measured gm values of 62 mS/mm are the highest yet reported for Si PBTs.
Keywords
bipolar transistors; elemental semiconductors; semiconductor technology; silicon; sputter etching; vapour phase epitaxial growth; 0.5 to 2 micron; LPVPE-grown material; RIE; Si PBT; Si transistors; dual-gate PBT; emitter geometry; grooved-etched transistors; mixer applications; self-aligned formation; semiconductors; two separate base electrodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870322
Filename
4257652
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