Title :
A 1-Watt, 8-14-GHz HBT amplifier with >45% peak power-added efficiency
Author :
Salib, Mike ; Ali, Fazal ; Gupta, Aditya ; Dawson, Dale
Author_Institution :
Westinghouse Electric Corp., Baltimore, MD, USA
Abstract :
Four 0.25-W gallium arsenide heterojunction bipolar transistors (HBTs) were combined in a single-stage hybrid microstrip amplifier. An output power of >1 W was achieved over the 8.5-13.5-GHz band with >35% power-added efficiency (PAE). The peak PAE was 45.4% at 12.5 GHz. This result was repeated on a second unit that was subsequently tuned for improved performance at the upper end of the band. The PAE at 14 GHz increased to >43% with 1-W output while, at 8 GHz, it remained at approximately 30%.<>
Keywords :
heterojunction bipolar transistors; hybrid integrated circuits; microstrip components; microwave amplifiers; microwave integrated circuits; 0.25 W; 1 W; 30 to 45 percent; 8 to 14 GHz; GaAs; HBT amplifier; SHF; heterojunction bipolar transistors; hybrid microstrip amplifier; peak power-added efficiency; single-stage; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Microstrip; Performance gain; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Resistors;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
