Title :
The realization of a Ge-GaAs heterojunction transistor with usable gain
Author :
Jadus, D.K. ; Feucht, D.L.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Bipolar transistors; Doping; Electrodes; Germanium; Heterojunction bipolar transistors; Laboratories; Semiconductor films; Silicon; Solid state circuits; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16334
