• DocumentCode
    1032138
  • Title

    Very low-loss GaInAs/InP optical waveguides for the 10.6¿m wavelength

  • Author

    Delacourt, D. ; Papuchon, M. ; Di Forte-Poission, M.A. ; Razeghi, M.

  • Author_Institution
    Thomson-CSF, LCR, Orsay, France
  • Volume
    23
  • Issue
    9
  • fYear
    1987
  • Firstpage
    451
  • Lastpage
    453
  • Abstract
    Optical waveguides for the 10.6¿m wavelength have been fabricated using the MOCVD technique in the InP/GaInAs system. First, the indices of refraction of the relevant materials are determined using integrated-optic techniques. Then, high-optical-quality optical waveguides are reported with propagation losses as low as 0.7 dB/cm. These structures are the basis of more sophisticated electrically controlled devices for 10.6 ¿m.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; integrated optics; optical waveguides; vapour phase epitaxial growth; 10.6 micron; GaInAs-InP optical waveguides; MOCVD; MOVPE; electrically controlled devices; high-optical-quality optical waveguides; propagation losses;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870325
  • Filename
    4257655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032138