Title :
Very low-loss GaInAs/InP optical waveguides for the 10.6¿m wavelength
Author :
Delacourt, D. ; Papuchon, M. ; Di Forte-Poission, M.A. ; Razeghi, M.
Author_Institution :
Thomson-CSF, LCR, Orsay, France
Abstract :
Optical waveguides for the 10.6¿m wavelength have been fabricated using the MOCVD technique in the InP/GaInAs system. First, the indices of refraction of the relevant materials are determined using integrated-optic techniques. Then, high-optical-quality optical waveguides are reported with propagation losses as low as 0.7 dB/cm. These structures are the basis of more sophisticated electrically controlled devices for 10.6 ¿m.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; integrated optics; optical waveguides; vapour phase epitaxial growth; 10.6 micron; GaInAs-InP optical waveguides; MOCVD; MOVPE; electrically controlled devices; high-optical-quality optical waveguides; propagation losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870325
