Title :
High-power high-gain subnanosecond-risetime amplification with electron-beam—p-n-junction-active devices
Author :
Norris, C.B., Jr.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Electron beams; Electron mobility; Epitaxial layers; Fabrication; Impedance; Laboratories; Semiconductor diodes; Silicon; Substrates; Time measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16341
