DocumentCode

1032195

Title

High-power high-gain subnanosecond-risetime amplification with electron-beam—p-n-junction-active devices

Author

Norris, C.B., Jr.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

434

Lastpage

434

Keywords

Electron beams; Electron mobility; Epitaxial layers; Fabrication; Impedance; Laboratories; Semiconductor diodes; Silicon; Substrates; Time measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16341

Filename

1475243