• DocumentCode
    1032268
  • Title

    Gate current in 0.75μm N-channel MOSFETs with doubly diffused drain

  • Author

    Watts, R.K. ; Manchanda, L. ; Johnston, Roy L.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    23
  • Issue
    9
  • fYear
    1987
  • Firstpage
    468
  • Lastpage
    469
  • Abstract
    The MOSFET with doubly diffused drain has been proposed as a solution to the problem of degradation in small MOSFETs. We find good agreement between measured gate current and values calculated assuming that the gate current is due to hot channel electrons thermionically emitted into the gate oxide.
  • Keywords
    digital simulation; hot carriers; insulated gate field effect transistors; semiconductor device models; 0.75 micron; doubly diffused drain; hot channel electrons; measured gate current; models; n-channel MOSFETs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870337
  • Filename
    4257667
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032268