• DocumentCode
    1032319
  • Title

    Low-noise D-band IMPATT oscillators

  • Author

    Wenger, Jerome ; Huber, Samuel

  • Author_Institution
    Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
  • Volume
    23
  • Issue
    9
  • fYear
    1987
  • Firstpage
    475
  • Lastpage
    476
  • Abstract
    The single-sideband FM noise characteristics of IMPATT diode oscillators for D-band frequencies have been measured by means of a direct-detection system with a high-Q quasi-optical resonator. For an n-type silicon single-drift IMPATT diode a ¿frms of 11 Hz/¿Hz and a noise measure of 37 dB at 137.5 GHz and 26 mW output power was determined.
  • Keywords
    IMPATT diodes; cavity resonators; electron device noise; microwave oscillators; 137.5 GHz; 26 mW; 37 dB; D-band impatt oscillators; EHF; FM noise; MM-waves; Si diodes; direct-detection system; high-Q quasi-optical resonator; impatt diode oscillators; n-type Si single-drift IMPATT diode; noise measure; output power; single-sideband FM noise characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870342
  • Filename
    4257672
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032319