Title :
Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavity
Author :
Sansonetti, Pierre ; Riboth, H. ; Brandon, J. ; Menigaux, L. ; Dugrand, L. ; Bouadma, N.
Author_Institution :
Centre National d´Etudes des Télécommunications, Laboratoire de Bagneux, Bagneux, France
Abstract :
GaAs/GaAlAs buried quarter ring lasers with a constant stripe shape along the cavity were fabricated by ion beam etching. Threshold currents of 23 mA were obtained for 2 ¿m-wide and 430 ¿m-long cavities on a wafer, for which the broad-area threshold current density was l.7 kA/cm2. This structure leaves the rest of the wafer free for optoelectronic integration.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser cavity resonators; ring lasers; semiconductor junction lasers; sputter etching; 23 mA; GaAs-GaAlAs buried heterostructure laser; broad-area threshold current density; constant stripe shape; ion-beam-etched quarter ring cavity; optoelectronic integration; semiconductor laser; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870353
