Title :
Device design considerations for an ultra-high-voltage (>1600 volts) high-frequency switching transistor
Author :
Myers, D.K. ; Turner, S.A.
fDate :
6/1/1968 12:00:00 AM
Keywords :
Boron; Etching; Frequency; Insertion loss; Plasma applications; Plasma devices; Plasma temperature; Protection; Varactors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16365
