DocumentCode

1032449

Title

Device design considerations for an ultra-high-voltage (>1600 volts) high-frequency switching transistor

Author

Myers, D.K. ; Turner, S.A.

Volume

15

Issue

6

fYear

1968

fDate

6/1/1968 12:00:00 AM

Firstpage

438

Lastpage

438

Keywords

Boron; Etching; Frequency; Insertion loss; Plasma applications; Plasma devices; Plasma temperature; Protection; Varactors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16365

Filename

1475267