Title :
Pressure dependence of threshold current and carrier lifetime in 1.55 μm GaInAsP lasers
Author :
Heasman, K.C. ; Adams, A.R. ; Greene, P.D. ; Henshall, G.D.
Author_Institution :
University of Surrey, Department of Physics, Guildford, UK
Abstract :
The threshold current and carrier lifetime were measured as a function of pressure in oxide stripe and IRW GaxIn1-xAsyP1-y 1.55 μm lasers. The results indicate that intervalence band absorption is a more important loss mechanism than the combined effects of Auger recombination, loss over the barrier and recombination through defects.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 1.55 micron; Auger recombination; GaInAsP laser; carrier lifetime; defect recombination; intervalence band absorption; inverted rib waveguide laser; loss mechanism; oxide stripe laser; pressure dependence; semiconductor laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870357
