• DocumentCode
    1032492
  • Title

    Laser recrystallised SOI with periodical seeding filled by selective epitaxial growth

  • Author

    Regolini, J.L. ; Dutartre, D. ; Bensahel, D. ; Karapiperis, L. ; Garry, G. ; Dieumegard, D.

  • Author_Institution
    Centre National d´Etudes des Télécommunications, Meylan, France
  • Volume
    23
  • Issue
    10
  • fYear
    1987
  • Firstpage
    493
  • Lastpage
    494
  • Abstract
    A periodic seeding technique for obtaining thin silicon films on an insulator (SOI) by laser recrystallisation is described. Two types of seed structure as well as their orientations relative to the scan direction are discussed. Geometrical parameters are optimised to obtain 35¿m-wide defect-free SOI stripes across 4in (101-6mm) silicon wafers.
  • Keywords
    elemental semiconductors; laser beam applications; recrystallisation; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; silicon; vapour phase epitaxial growth; zone melting; SOI stripes; Si-SiO2; VPE; laser ZMR; laser recrystallisation; periodic seeding technique; scan direction; seed structure; selective epitaxial growth; semiconductor insulator boundary;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870358
  • Filename
    4257689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032492