Title :
High-efficiency quasimicrowave GaAs FET power amplifier
Author :
Nojima, Toshio ; Nishiki, S. ; Chiba, Kazuya
Author_Institution :
NTT Electrical Communications Laboratories, Yokosuka, Japan
Abstract :
A 1.7 GHz-based class-F GaAs FET amplifier is proposed. To achieve high-efficiency performance, a precisely adjustable terminating circuit constructed with lumped elements is introduced. Power-added efficiency of 68% at 1.5 W output is attained with the amplifier.
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; microwave amplifiers; power amplifiers; solid-state microwave circuits; 1.5 W; 1.7 GHz; 68 percent; GaAs; adjustable terminating circuit; class F amplifier; lumped elements; power added efficiency; quasimicrowave FET power amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870370
