DocumentCode
1032626
Title
pMOS dosimeter with two-layer gate oxide operated at zero and negative bias
Author
Ristic, G. ; Golubovic, S. ; Pejovic, M.
Author_Institution
Fac. of Electron. Eng., Belgrade Univ.
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
295
Lastpage
296
Abstract
The linearity of threshold voltage shift, during irradiation of thick gate oxide pMOS transistors, operated at zero and negative bias, is investigated. It is found that the threshold voltage shift is not linear in the `zero bias regime´. The linearity increases with an increase in the absolute value of the negative gate voltage
Keywords
dosimeters; gamma-ray effects; insulated gate field effect transistors; gamma-ray effects; linearity; negative bias; negative gate voltage; pMOS dosimeter; thick gate oxide pMOS transistors; threshold voltage shift; two-layer gate oxide; zero bias regime;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940196
Filename
267289
Link To Document