Title :
Antiguided laser array structure at 1.48 μm fabricated without overgrowth
Author :
Laughton, F.R. ; Marsh, John H. ; Button, C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
fDate :
2/17/1994 12:00:00 AM
Abstract :
The authors describe the fabrication of five-element antiguided laser arrays at 1.48 μm using a novel material design which removes the need for overgrowth. Adding undoped passive waveguiding layers to the standard laser design significantly alters the shape of the far field emission from the lasers, showing that the array elements are pulled in phase with each other
Keywords :
integrated optics; laser transitions; optical waveguides; optical workshop techniques; semiconductor laser arrays; 1.48 micron; InGaAs-InGaAsP-InP; antiguided laser array structure; fabrication; far field emission; five-element array; laser design; undoped passive waveguiding layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940204
