Optimization of diode structures for monolithic integrated microwave circuits

Device requirements of a medium power Ku-band reflective phase shifter are reviewed indicating a requirement for a diode with a 4-Terrahertz cut-off frequency. Various structures are examined to test their suitability for integration and feasibility for meeting specifications. A "pocket version" of a surface oriented device design is chosen and described. It is shown to meet or exceed all electrical requirements while providing for compatibility with final integration into the circuit.