Title :
2.4 W CW 770 nm laser arrays with nonabsorbing mirrors
Author :
Welch, D.F. ; Streifer, W. ; Thornton, R.L. ; Paoli, T.
Author_Institution :
Spectra Diode Laboratories, San Jose, USA
Abstract :
Laser arrays have been fabricated with silicon-impurityinduced disordered nonabsorbing mirrors (windows) to enhance the maximum CW power output. The power output was thermally limited for a 100 ¿m-aperture device to 2.4 W CW while catastrophic failure occurred under pulsed conditions at 3.5 W in a 100 ¿s pulse and increased to 22 W for a 50 ns pulse. The emission wavelength of these diodes is 770 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser transitions; semiconductor junction lasers; 100 micron; 2.4 to 22 W; 50 ns to 100 mus; 770 nm; CW power output; GaAs-AlGaAs; Si impurity-induced disorder; catastrophic failure; cavity-resonators; continuous wave operation; emission wavelength; laser arrays; nonabsorbing mirrors; pulse length; pulsed conditions; semiconductor diode lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870379
