Title :
Al0.45Ga0.55As/GaAs HEMTs grown by MOVPE exhibiting high transconductance
Author :
Powell, A. ; Mistry, Perhaad ; Roberts, Jeffrey S. ; Rockett, P.I.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
We report results of Al0.45Ga0.55As/GaAs HEMTs grown by atmospheric-pressure MOVPE. The 1 ¿m-gate-length devices exhibited extrinsic room-temperature transconductances as high as 295mS/mm, which we believe to be the best DC performance to date for devices utilising such a high Al mole fraction.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor growth; vapour phase epitaxial growth; 1 micron; 295 ms; Al0.45Ga0.55As-GaAs; DC performance; HEMTs; III-V semiconductors; VPE; atmospheric-pressure MOVPE; high transconductance; micron gate length devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870381
