Generation of 110 GHz train of subpicosecond pulses in 1.535 μm spectral region by passively modelocked InGaAsP/InP laser diodes

Author

Deryagin, A.G. ; Kuksenkov, Dmitri V ; Kuchinskii, V.I. ; Portnoi, E.L. ; Khrushchev, I.Yu.

Author_Institution

Physicotech. Inst., Acad. of Sci., St. Petersburg

Volume

30

Issue

4

fYear

1994

fDate

2/17/1994 12:00:00 AM

Firstpage

309

Lastpage

311

Abstract

Subpicosecond optical pulses are generated by passive modelocking in bulk active layer InGaAsP semiconductor lasers under CW pumping. The saturable absorber regions are formed by deep implantation of heavy ions into the diode facets. Optical pulses with 0.64 ps width are realised at 110 GHz repetition rate without using any external AC sources. No changes In spectra and autocorrelation traces were observed after 50 h of CW operation

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ion implantation; laser mode locking; laser transitions; optical saturable absorption; semiconductor lasers; 0.64 ps; 1.53 to 1.54 micron; 1.535 μm spectral region; 1.535 micron; 110 GHz; 650 fs; CW operation; CW pumping; InGaAsP-InP; InGaAsP/InP laser diodes; bulk active layer; deep implantation; diode facets; heavy ions; optical pulses; passive modelocking; passively modelocked; saturable absorber regions; semiconductor lasers; subpicosecond pulse;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940238

Filename

267299