DocumentCode
1032755
Title
High-power low-threshold Ga0.88In0.12As0.10Sb0.90-Al 0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy
Author
Grunberg, P. ; Baranov, Alexander ; Fouillant, C. ; Grech, P. ; Boissier, G. ; Alibert, C. ; Joullie, A.
Author_Institution
Equipe de Microoptoelectron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
312
Lastpage
314
Abstract
Ga0.88In0.12As0.10Sb0.90 /Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers emitting at 2.05 μm have been grown by liquid phase epitaxy on GaSb substrates. For pulsed operation of 300 μm wide broad stripe lasers, output power as high as 80 mW per facet and threshold current density as low as 1.7 kA/cm2 have been obtained for cavity lengths of 300 and 900 μm respectively. Mesa-stripe lasers 200 μm long showed room temperature threshold current of 200 mA with a characteristic temperature T0=115 K
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium antimonide; liquid phase epitaxial growth; semiconductor growth; semiconductor lasers; 2.05 mum; 200 mA; 200 mum; 300 mum; 80 mW; 900 mum; Ga0.88In0.12As0.10Sb0.90 -Al0.47Ga0.53As0.04Sb0.96 ; GaInAsSb/AlGaAsSb DH lasers; GaSb; GaSb substrates; broad stripe lasers; characteristic temperature; liquid phase epitaxy; mesa-stripe lasers; output power; pulsed operation; room temperature threshold current; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940239
Filename
267302
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