Title :
High-reflectance AlPSb/GaPSb distributed Bragg reflector mirrors on InP grown by gas-source molecular beam epitaxy
Author :
Shimomura, H. ; Anan, T. ; Mori, Kazuo ; Sugou, S.
Author_Institution :
Optoelectron. Res. Labs., NEC Corp., Tsukuba
fDate :
2/17/1994 12:00:00 AM
Abstract :
Large refractive-index difference, 1.55 μm distributed Bragg reflectors, using AlPSb and GaPSb lattice matched to InP, are demonstrated. This is the first report of AlPSb/GaPSb quarter-wave distributed Bragg reflectors. This mirror structure will be useful for InP-based surface-emitting laser applications at long wavelengths
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; integrated optics; laser cavity resonators; laser transitions; mirrors; molecular beam epitaxial growth; refractive index; semiconductor growth; semiconductor lasers; 1.55 micron; AlPSb-GaPSb-InP; AlPSb/GaPSb mirrors; DBR lasers; InP; distributed Bragg reflector mirrors; gas-source molecular beam epitaxy; long wavelengths; mirror structure; quarter-wave DBR; surface-emitting laser applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940230
