Title :
High-reflectivity GeSi/Si asymmetric Bragg reflector at 0.8 μm
Author :
Murtaza, Shafaq ; Campbell, Joe ; Bean, J.C. ; Peticolas, L.J.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
fDate :
2/17/1994 12:00:00 AM
Abstract :
A high reflectivity GeSi/Si Bragg mirror centred at 800 nm is reported. The increased absorption in the GeSi layers at this wavelength is found to be more than compensated for by the increased refractive index step available. Agreement with simulations is excellent. This mirror can be used to fabricate a high quantum efficiency, high speed resonant cavity photodiode
Keywords :
Ge-Si alloys; distributed Bragg reflector lasers; elemental semiconductors; integrated optics; integrated optoelectronics; laser cavity resonators; mirrors; optical resonators; photodetectors; photodiodes; reflectivity; refractive index; semiconductor materials; silicon; 800 nm; GeSi-Si; GeSi/Si Bragg mirror; asymmetric Bragg reflector; high quantum efficiency; high speed photodiode; high-reflectivity mirror; refractive index step; resonant cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940205
