• DocumentCode
    1032792
  • Title

    Optically transparent indium-tin-oxide (ITO) ohmic contacts in the fabrication of vertical-cavity surface-emitting lasers

  • Author

    Matin, Md Abdul ; Jezierski, A.F. ; Lacklison, D.E. ; Benson, T.M. ; Cheng, T.S. ; Roberts, Jeffrey S. ; Sale, T.E. ; Orton, J.W. ; Foxon, C.T. ; Rezazadeh, Ali A.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Nottingham Univ.
  • Volume
    30
  • Issue
    4
  • fYear
    1994
  • fDate
    2/17/1994 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    320
  • Abstract
    The authors report what they believe to be the first successful fabrication of an InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) using optically transparent indium-tin-oxide (ITO) ohmic contacts to p- and n-type regions of the laser. Threshold current densities Jth are similar to those lasers fabricated from the same wafer using conventional ohmic contacts
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; ohmic contacts; optical workshop techniques; semiconductor lasers; semiconductor materials; sputter deposition; sputtered coatings; tin compounds; 20 mA; 963 nm; ITO ohmic contacts; InGaAs-GaAs-ITO; InGaAs-GaAs-InSnO; InGaAs/GaAs; RF sputtering; VCSEL; fabrication; n-type regions; optically transparent; p-type regions; surface-emitting lasers; threshold current densities; vertical-cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940243
  • Filename
    267306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032792