DocumentCode
1032816
Title
Temperature dependence of 2 μm strained-quantum-well InGaAs/InGaAsP/InP diode lasers
Author
Martinelli, R.U. ; Menna, R.J. ; Triano, Alex ; Olsen, G.H.
Author_Institution
David Sarnoff Res. Center, Princeton, NJ
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
324
Lastpage
326
Abstract
Strained multiquantum-well InGaAs lasers had CW thresholds near 50 mA at 2 μm at 312 K. Abrupt decreases in characteristic temperatures (T0) occurred at 250 K for threshold current and 273 K for external quantum efficiency, indicating a highly temperature sensitive nonradiative recombination mechanism
Keywords
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 2 micron; 250 to 312 K; 50 mA; CW thresholds; InGaAs-InGaAsP-InP; InGaAs/InGaAsP/InP; MQW lasers; characteristic temperatures; diode lasers; multiquantum-well; nonradiative recombination mechanism; strained-quantum-well; temperature dependence; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940222
Filename
267309
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