• DocumentCode
    1032823
  • Title

    1.3μm InGaAsP/InP distributed-feedback P-substrate partially inverted buried-heterostructure laser diode

  • Author

    Takemoto, Ayumi ; Sakakibara, Y. ; Nakajima, Yoshiki ; Fujiwara, Masamichi ; Kakimoto, Shinji ; Namizaki, H. ; Susaki, W.

  • Author_Institution
    Mitsubishi Electric Corporation, LSI R&D Laboratory, Itami, Japan
  • Volume
    23
  • Issue
    11
  • fYear
    1987
  • Firstpage
    546
  • Lastpage
    547
  • Abstract
    A novel 1.3μm InGaAsP/lnP distributed-feedback buried-heterostructure laser diode on p-type InP substrate has been developed utilising a dopant diffusion technique. The laser has achieved a threshold current as low as 20 mA and high output power of 32 mW under CW and SLM operation.
  • Keywords
    distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron; 20 mA; 32 mW; CW operation; InGaAsP-InP; InP; SLM operation; distributed-feedback buried-heterostructure laser diode; dopant diffusion technique; optical communication equipment; output power; p-type InP substrate; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870392
  • Filename
    4257724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032823