Title :
1.3μm InGaAsP/InP distributed-feedback P-substrate partially inverted buried-heterostructure laser diode
Author :
Takemoto, Ayumi ; Sakakibara, Y. ; Nakajima, Yoshiki ; Fujiwara, Masamichi ; Kakimoto, Shinji ; Namizaki, H. ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI R&D Laboratory, Itami, Japan
Abstract :
A novel 1.3μm InGaAsP/lnP distributed-feedback buried-heterostructure laser diode on p-type InP substrate has been developed utilising a dopant diffusion technique. The laser has achieved a threshold current as low as 20 mA and high output power of 32 mW under CW and SLM operation.
Keywords :
distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron; 20 mA; 32 mW; CW operation; InGaAsP-InP; InP; SLM operation; distributed-feedback buried-heterostructure laser diode; dopant diffusion technique; optical communication equipment; output power; p-type InP substrate; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870392
