DocumentCode :
1032902
Title :
Internal lead fatigue through thermal expansion in semiconductor devices
Author :
Gaffney, J.
Volume :
15
Issue :
8
fYear :
1968
fDate :
8/1/1968 12:00:00 AM
Firstpage :
617
Lastpage :
617
Keywords :
Aluminum; Bonding; Fatigue; Heating; Laboratories; Lead compounds; Semiconductor devices; Thermal expansion; Thermal resistance; Wire;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16412
Filename :
1475314
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1032902
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