• DocumentCode
    1032924
  • Title

    Novel process for emitter-base-collector self-aligned heterojunction bipolar transistor using a pattern-inversion method

  • Author

    Tanaka, Shoji ; Madihian, Mohammad ; Toyoshima, Hisashi ; Hayama, N. ; Honjo, Kazuhiko

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    23
  • Issue
    11
  • fYear
    1987
  • Firstpage
    562
  • Lastpage
    564
  • Abstract
    A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 × 10¿m2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.
  • Keywords
    bipolar transistors; semiconductor technology; 1.5 micron; 10 micron; base-emitter-collector self-aligned HBTs; current gain; dry-etching method; heterojunction bipolar transistor; pattern-inversion method; process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870403
  • Filename
    4257735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032924