Title :
Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layer
Author :
Nagata, Kazuyuki ; Nakajima, O. ; Nittono, T. ; Ito, H. ; Ishibashi, Takayuki
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
The effects of the emitter resistance reduction on the DC and high-frequency characteristics in an AIGaAs/GaAs HBT with an InGaAs emitter cap layer are investigated. In fabricated devices, a transconductance per unit area of 16mS/¿m2 and a cutoff frequency of 80 GHz have been achieved.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; solid-state microwave devices; 80 GHz; AlGaAs-GaAs; DC characteristics; EHF; HBT performance; InGaAs emitter cap layer; MM-waves; cutoff frequency; emitter resistance; high-frequency characteristics; semiconductors; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870406
