• DocumentCode
    1032953
  • Title

    Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layer

  • Author

    Nagata, Kazuyuki ; Nakajima, O. ; Nittono, T. ; Ito, H. ; Ishibashi, Takayuki

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi, Japan
  • Volume
    23
  • Issue
    11
  • fYear
    1987
  • Firstpage
    566
  • Lastpage
    568
  • Abstract
    The effects of the emitter resistance reduction on the DC and high-frequency characteristics in an AIGaAs/GaAs HBT with an InGaAs emitter cap layer are investigated. In fabricated devices, a transconductance per unit area of 16mS/¿m2 and a cutoff frequency of 80 GHz have been achieved.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; solid-state microwave devices; 80 GHz; AlGaAs-GaAs; DC characteristics; EHF; HBT performance; InGaAs emitter cap layer; MM-waves; cutoff frequency; emitter resistance; high-frequency characteristics; semiconductors; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870406
  • Filename
    4257738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1032953