Title :
Monolithically integrated, photoreceiver with large, gain-bandwidth product
Author :
Wojtczuk, S.J. ; Ballantyne, J.M. ; Chen, Y.K. ; Wanuga, S.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
A direct-detection 800 nm GaAs monolithically integrated photoreceiver is reported with a photocurrent gain of 200 and a 1 GHz bandwidth capable of driving a 50 ¿ load with IV peak pulses. The integrated NPN photodiode has over 7GHz bandwidth and requires no modifications to the ion-implanted GaAs MESFET process. The 200GHz gain-bandwidth product and 3200 V/W responsivity are among the highest reported for similar receivers.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; photodetectors; photodiodes; solid-state microwave circuits; 1 GHz; 1 V; 200 GHz gain-bandwidth product; 3200 V/W responsivity; 50 ohm; 7 GHz; 800 nm; GaAs; GaAs monolithically integrated photoreceiver; direct-detection; integrated N P N photodiode; ion-implanted GaAs MESFET process; photocurrent gain; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870411
