Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems

Author

Manghisoni, Massimo ; Ratti, Lodovico ; Re, Valerio ; Speziali, Valeria ; Traversi, Gianluca ; Fallica, Giorgio ; Leonardi, Salvatore

Author_Institution

Dipt. di Ingegneria Ind.e, Univ. di Bergamo, Dalmine, Italy

Volume

51

Issue

3

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

980

Lastpage

986

Abstract

This paper is concerned with the analysis of the noise properties of NPN bipolar junction transistors fabricated in a monolithic technology. Such devices are part of a BiCMOS silicon on insulator process, whose suitability for radiation hard applications is being evaluated. A thorough noise characterization, including series and parallel contribution measurements, was performed in view of the design of high-speed analog front-end electronics for radiation detectors. For this purpose, a method for optimizing the noise performances of charge measuring systems has been applied to the experimental data from single device characterization.

Keywords

bipolar transistors; charge measurement; noise; nuclear electronics; particle detectors; radiation detection; silicon-on-insulator; BiCMOS silicon on insulator process; NPN SOI bipolar junction transistor; charge measuring system; high-speed analog front-end electronics; monolithic technology; noise analysis; noise characterization; parallel noise; radiation detector; radiation hard application; series noise; single device characterization; spreading resistance; Bipolar transistors; Charge measurement; Current measurement; Noise measurement; Performance evaluation; Semiconductor device noise; Signal analysis; Silicon on insulator technology; Testing; Thermal resistance; Bipolar transistors; front-end electronics; parallel noise; series noise; spreading resistance;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.829580

Filename

1312003