Title :
Low dark current and high linearity InGaAs MSM photodetectors
Author :
Chyi, Jen-Inn ; Hong, Jin-Woo ; Lin, Weisi ; Tu, Y.-K.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li
fDate :
2/17/1994 12:00:00 AM
Abstract :
InGaAs metal-semiconductor-metal photodetectors with various barrier enhancement layers have been investigated. The responsivity at 1.55 μm wavelength varies between 0.21 and 0.43 A/W depending on layer structure, bias voltage and photosensitive area. Using a pseudomorphic In0.9Ga0.1P cap layer on InP for Schottky contacts, devices exhibit dark current densities as low as 44 μA/cm2. The responsivity is also much more linear than those of conventional devices with respect to both bias voltage and incident optical power level
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; photodetectors; 1.55 mum; In0.9Ga0.1P; InGaAs; InGaAs MSM photodetectors; InP; Schottky contacts; barrier enhancement layers; bias voltage; dark current densities; high linearity; incident optical power level; layer structure; low dark current; metal-semiconductor-metal photodetectors; photosensitive area; pseudomorphic In0.9Ga0.1P cap layer; responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940215
