Barrier height enhancement of Au Schottky junctions on phosphine-plasma treated n-AlInAs

Author

Sugino, Takushi ; Yamamura, I. ; Shirafuji, J.

Author_Institution

Dept. of Electr. Eng., Osaka Univ.

Volume

30

Issue

4

fYear

1994

fDate

2/17/1994 12:00:00 AM

Firstpage

359

Lastpage

361

Abstract

The effect of surface phosphidisation on the barrier height of Au/AlInAs (Al 48%) Schottky diodes was studied. The surface of AlInAs is treated with phosphine (PH₃) plasma at 250°C. Schottky junctions formed on the phosphidised AlInAs employ a metal insulator-semiconductor (MIS) structure due to the existence of phosphorus related layers deposited on the AlInAs surface. An effective barrier height as high as O.82eV was successfully obtained for the Au/n-AlInAs Schottky junction with a true barrier height of 0.74eV which is close to the ideal barrier height expected for the Schottky-Mott model. Owing to the enhanced barrier height, the reverse leakage current can be reduced by more than four orders of magnitude in comparison with that of conventional diodes

Keywords

III-V semiconductors; Schottky-barrier diodes; aluminium compounds; gold; indium compounds; leakage currents; metal-insulator-semiconductor structures; passivation; plasma applications; semiconductor-metal boundaries; 0.74 eV; 0.82 eV; 250 C; Au Schottky junctions; Au-AlInAs; Au/AlInAs Schottky diodes; MIS structure; PH₃; PH₃ plasma; Schottky junctions; barrier height enhancement; metal insulator-semiconductor structure; phosphidised AlInAs; phosphine-plasma treated n-AlInAs; reverse leakage current; surface phosphidisation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940213

Filename

267333