DocumentCode :
1033099
Title :
Sensitivity of GaAs analogue integrated circuit building blocks to the effect of back-gating
Author :
Lee, Woo Seung
Author_Institution :
STC Technology Limited, Harlow, UK
Volume :
23
Issue :
11
fYear :
1987
Firstpage :
587
Lastpage :
589
Abstract :
The effects of back-gating on two basic GaAs precision analogue circuit building blocks have been established. Owing to internal gain, the stability of the single-stage inverter amplifier was found to be most susceptible to both positive and negative side-contact potentials, and the generation of low-frequency oscillations. The use of negative feedback to improve DC stability was demonstrated. In contrast, the source-follower exhibited relatively better stability against back-gating.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; linear integrated circuits; DC stability; GaAs integrated circuits; back-gating; generation of low-frequency oscillations; internal gain; negative feedback; precision analogue circuit building blocks; side-contact potentials; single-stage inverter amplifier; source-follower;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870422
Filename :
4257754
Link To Document :
بازگشت