DocumentCode :
1033107
Title :
Effect of NH3 nitridation on time-dependent dielectric breakdown characteristics of heavily oxynitrided tunnel oxide films
Author :
Arakawa, Takeshi ; Fukada, H.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo
Volume :
30
Issue :
4
fYear :
1994
fDate :
2/17/1994 12:00:00 AM
Firstpage :
361
Lastpage :
362
Abstract :
The effects of NH3 nitridation temperature (800-1000°C) and time (15-90 s) in a dry oxidation NH3-nitridation-N2O oxynitridation sequence on the time-dependent dielectric breakdown (TDDB) characteristics of oxynitrided SiO2 films are investigated. It is found that high-temperature (1000°C) and short-time (30 sec) NH3 nitridation gives excellent TDDB characteristics
Keywords :
ammonia; dielectric thin films; electric breakdown of solids; metal-insulator-semiconductor structures; nitridation; oxidation; silicon compounds; 15 to 90 s; 800 to 1000 C; NH3; NH3 nitridation; SiO2-Si3N4-SiO2-Si; heavily oxynitrided tunnel oxide films; nitridation; oxynitridation; oxynitrided SiO2 films; time-dependent dielectric breakdown characteristics;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940236
Filename :
267334
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1033107
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