Title :
Effective V-F characteristics in submicrometre GaAs MESFETs evaluated by ensemble Monte Carlo simulation
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Kumamoto Univ.
fDate :
2/17/1994 12:00:00 AM
Abstract :
The effective velocity-field characteristics in a 0.5 μm gate-length GaAs MESFET are evaluated by ensemble Monte Carlo simulation. It is shown that their double-valued properties are caused by hot electron and inertia effects
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; gallium arsenide; hot carriers; semiconductor device models; simulation; 0.5 micron; GaAs; V-F characteristics; double-valued properties; effective velocity-field characteristics; ensemble Monte Carlo simulation; hot electron effects; inertia effects; submicrometre GaAs MESFETs; submicron gate length;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940221
