DocumentCode
1033121
Title
Effective V-F characteristics in submicrometre GaAs MESFETs evaluated by ensemble Monte Carlo simulation
Author
Yamada, Y.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Kumamoto Univ.
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
362
Lastpage
363
Abstract
The effective velocity-field characteristics in a 0.5 μm gate-length GaAs MESFET are evaluated by ensemble Monte Carlo simulation. It is shown that their double-valued properties are caused by hot electron and inertia effects
Keywords
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; gallium arsenide; hot carriers; semiconductor device models; simulation; 0.5 micron; GaAs; V-F characteristics; double-valued properties; effective velocity-field characteristics; ensemble Monte Carlo simulation; hot electron effects; inertia effects; submicrometre GaAs MESFETs; submicron gate length;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940221
Filename
267335
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