Title :
Three terminal GaAs light emitter-modulator device
Author :
Califano, F.P. ; Steele, M.C.
fDate :
9/1/1968 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Gallium arsenide; Ion implantation; Isolation technology; Laboratories; P-n junctions; Photodetectors; Protons; Schottky diodes; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16437
