Observation of charge storage in diamond MIS capacitors

Diamond MIS capacitors have been fabricated on natural diamond with a CVD SiO₂ dielectric. By suitably cleaning the substrate and annealing the deposited film, the authors obtained good silicon dioxide to diamond adhesion. The resulting devices were characterised by current-voltage, capacitance-voltage, and capacitance-time curves under illumination. The authors demonstrated that the devices have leakage current sufficiently low to allow formation of an inversion layer. Devices were biased into deep depletion and then inverted with photogenerated carriers