Title :
Reappearance of plasma induced oxide charge under Fowler-Nordheim stress
Author :
Li, Xin ; Hsu, J.-T. ; Aum, P. ; Chan, Daniel ; Viswanathan, C.R.
Author_Institution :
Dept. of Electr. Eng., California State Univ., Los Angeles, CA
fDate :
2/17/1994 12:00:00 AM
Abstract :
The effect of plasma charging in thin gate oxide was studied under both polarities of Fowler-Nordheim (F-N) charge injection. The authors found that, although plasma induced oxide charge was temporarily removed, it reappears after F-N current injection. The results reveal that electron traps are created in nMOSFETs, whereas hole traps are created in pMOSFETs due to the plasma etching in the process
Keywords :
electron traps; high field effects; hole traps; insulated gate field effect transistors; insulating thin films; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; sputter etching; Fowler-Nordheim stress; LDD MOSFET; charge injection; electron traps; hole traps; nMOSFETs; pMOSFETs; plasma charging; plasma etching; plasma induced oxide charge; thin gate oxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940203
