DocumentCode :
1033165
Title :
Isolation of junction devices in GaAs using proton radiation damage
Author :
Foyt, A.G. ; Lindley, W.T. ; Donnelly, J.P. ; Wolfe, C.M.
Volume :
15
Issue :
9
fYear :
1968
fDate :
9/1/1968 12:00:00 AM
Firstpage :
687
Lastpage :
687
Keywords :
Delay; Extinction ratio; Gallium arsenide; Laboratories; Laser beams; Optical attenuators; Optical modulation; Optical polarization; Protons; Radio frequency;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16440
Filename :
1475342
Link To Document :
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