Title :
Transient response measurement of kink effect in InAlAs/InGaAs/InP HEMTs
Author :
Kruppa, W. ; Boos, J. Brad
Author_Institution :
Naval Res. Lab., Washington, DC
fDate :
2/17/1994 12:00:00 AM
Abstract :
The kink effect in InAlAs/InGaAs/InP HEMTs is examined in the time domain with the use of voltage pulses applied to the drain of the device. The transient response shows opposite slopes below and above the kink voltage associated with carrier capture and emission. The results are found to be consistent with frequency-domain dispersion measurements made on the output resistance. The causes and time constants of the transients are discussed
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; high electron mobility transistors; indium compounds; transient response; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMTs; carrier capture; carrier emission; kink effect; kink voltage; time constants; time domain measurement; transient response measurement; voltage pulses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940037
