DocumentCode
1033171
Title
Transient response measurement of kink effect in InAlAs/InGaAs/InP HEMTs
Author
Kruppa, W. ; Boos, J. Brad
Author_Institution
Naval Res. Lab., Washington, DC
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
368
Lastpage
369
Abstract
The kink effect in InAlAs/InGaAs/InP HEMTs is examined in the time domain with the use of voltage pulses applied to the drain of the device. The transient response shows opposite slopes below and above the kink voltage associated with carrier capture and emission. The results are found to be consistent with frequency-domain dispersion measurements made on the output resistance. The causes and time constants of the transients are discussed
Keywords
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; high electron mobility transistors; indium compounds; transient response; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMTs; carrier capture; carrier emission; kink effect; kink voltage; time constants; time domain measurement; transient response measurement; voltage pulses;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940037
Filename
267339
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