DocumentCode :
1033176
Title :
Ion implantation
Author :
Gibbons, J.
Volume :
15
Issue :
9
fYear :
1968
fDate :
9/1/1968 12:00:00 AM
Firstpage :
687
Lastpage :
687
Keywords :
Extinction ratio; Gallium arsenide; Ion implantation; Laboratories; Laser beams; Optical attenuators; Optical modulation; Optical polarization; Particle beam optics; Radio frequency;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16441
Filename :
1475343
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1033176
