Title :
The presence of deep levels in ion implanted p-n junctions in GaAs and their effect on the electrical characteristics
Author :
Hunsperger, R.G. ; Marsh, O.J. ; Mead, C.A.
fDate :
9/1/1968 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Electric variables; Gallium arsenide; Ion implantation; Isolation technology; Laboratories; P-n junctions; Protons; Schottky diodes; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16442
