Title :
GaAs Schottky barrier photodiode with high gain
Author :
Lindley, W.T. ; Phelan, R.J. ; Wolfe, C.M.
fDate :
9/1/1968 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Detectors; Gallium arsenide; Ion implantation; Laboratories; PIN photodiodes; Photodetectors; Schottky barriers; Schottky diodes; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16443
