Title :
High-Power High-Linearity Uni-Traveling-Carrier Photodiodes for Analog Photonic Links
Author :
Chtioui, M. ; Enard, A. ; Carpentier, D. ; Bernard, S. ; Rousseau, B. ; Lelarge, F. ; Pommereau, F. ; Achouche, M.
Author_Institution :
Alcatel-Thales III-V Lab., Marcoussis
Abstract :
We have fabricated and characterized two high-power high-linearity uni-traveling-carrier photodiode (UTC-PD) structures. The UTC performances are compared regarding their respective collector design. A -3-dB bandwidth improvement (from 16-25 GHz to 19-32 GHz) is achieved when the collector layer thickness is increased (from 250 to 350 nm, respectively). The bandwidth improvement for large photocurrent is at the origin of a ldquosupra-linearityrdquo effect. Photocurrent saturation effects are investigated and -1-dB compression current measurements at 20 GHz show saturation currents as high as 70 mA at -4 V. We also report third-order intermodulation distortion measurements at 20 GHz. The ldquosupra-linearityrdquo effect enhances the PD linearity with increased photocurrent, leading to a record third-order intercept point of 35 dBm at 40 mA.
Keywords :
intermodulation distortion; photoconductivity; photodiodes; photoemission; UTC-PD; analog photonic links; frequency 16 GHz to 32 GHz; high-power high-linearity uni-traveling-carrier photodiodes; photocurrent saturation effects; size 250 nm to 350 nm; third-order intermodulation distortion measurements; Bandwidth; Current measurement; Distortion measurement; Electrons; Indium phosphide; Intermodulation distortion; Linearity; Photoconductivity; Photodiodes; Substrates; $-$ 1-dB compression; High-linearity photodiodes (PDs); high-power photodiodes (PDs); third-order intermodulation distortion (IMD3); uni-traveling-carrier photodiode (UTC-PD);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.913260