DocumentCode :
1033251
Title :
Doping distribution effects on n-n+GaAs epitaxial layer infrared reflectivity spectra
Author :
Berman, R.
Volume :
15
Issue :
9
fYear :
1968
fDate :
9/1/1968 12:00:00 AM
Firstpage :
688
Lastpage :
688
Keywords :
Diodes; Doping; Electric resistance; Electrical resistance measurement; Fluid flow measurement; Frequency dependence; Heat sinks; Resistance heating; Temperature sensors; Thermal resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16449
Filename :
1475351
Link To Document :
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