Title :
The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process
Author :
Ha, Jun-Seok ; Lee, S.W. ; Lee, Hyun-Jae ; Lee, Hyo-Jong ; Lee, S.H. ; Goto, H. ; Kato, T. ; Fujii, Katsushi ; Cho, M.W. ; Yao, T.
Author_Institution :
Tohoku Univ., Sendai
Abstract :
Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation.
Keywords :
III-V semiconductors; buffer layers; chromium compounds; etching; gallium compounds; light emitting diodes; optical fabrication; wide band gap semiconductors; GaN; GaN-CrN; LED; chemical lift-off process; current 1118 mA; current 350 mA; current-voltage performance; heat dissipation; injection forward current; metallic layer; selective chemical etching; selectively etchable buffer layer; series resistance; thermally conductive metal substrate; vertical light-emitting diodes; voltage 3.11 V; voltage 3.70 V; Buffer layers; Chemical processes; Electrostatic discharge; Etching; Fabrication; Gallium nitride; Light emitting diodes; Photonic crystals; Temperature; Thermal conductivity; Chemical lift-off; CrN buffer; GaN; light-emitting diodes (LEDs); vertical light-emitting diode (LED);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.912491
