Title :
Investigation of ZnSe-Ge heterojunction transistors
Author :
Hovel, H.J. ; Milnes, A.G.
fDate :
9/1/1968 12:00:00 AM
Keywords :
Doping; Electron traps; Gallium arsenide; Heat treatment; Heterojunctions; P-i-n diodes; Plasma temperature; Silicon; Voltage; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16451
