Title :
Charge storage effects in p-i-n diodes containing a large trap density
fDate :
9/1/1968 12:00:00 AM
Keywords :
Doping; Electron traps; Gallium arsenide; P-i-n diodes; Plasma temperature; Schottky barriers; Schottky diodes; Silicon; Voltage; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16452
