• DocumentCode
    1033335
  • Title

    Very low-threshold 1.53¿m DFB lasers by VPE transport

  • Author

    Broberg, B. ; Nilsson, S. ; Tanbun-Ek, T.

  • Author_Institution
    Institute of Microwave Technology, Stockholm, Sweden
  • Volume
    23
  • Issue
    12
  • fYear
    1987
  • Firstpage
    624
  • Lastpage
    625
  • Abstract
    DFB lasers with CW threshold currents as low as 8 mA at room temperature have been fabricated using the VPE transport process. The low threshold currents are attributed to narrow active stripes and to the high coupling strength of the grating. Single-mode lasing at 1.53¿m up to I = 8Ith and during high-speed direct modulation has been confirmed.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; optical modulation; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.53 micron; 8 mA; CW threshold currents; DFB lasers; InGaAsP-InP; VPE transport; grating; high coupling strength; high-speed direct modulation; narrow active stripes; optical communication equipment; room temperature; semiconductor lasers; single modelasing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870447
  • Filename
    4257780
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033335