Title :
Very low-threshold 1.53¿m DFB lasers by VPE transport
Author :
Broberg, B. ; Nilsson, S. ; Tanbun-Ek, T.
Author_Institution :
Institute of Microwave Technology, Stockholm, Sweden
Abstract :
DFB lasers with CW threshold currents as low as 8 mA at room temperature have been fabricated using the VPE transport process. The low threshold currents are attributed to narrow active stripes and to the high coupling strength of the grating. Single-mode lasing at 1.53¿m up to I = 8Ith and during high-speed direct modulation has been confirmed.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; optical modulation; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.53 micron; 8 mA; CW threshold currents; DFB lasers; InGaAsP-InP; VPE transport; grating; high coupling strength; high-speed direct modulation; narrow active stripes; optical communication equipment; room temperature; semiconductor lasers; single modelasing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870447
