DocumentCode :
1033355
Title :
¿/4-shifted AlGaAs/GaAs DFB lasers with double window structures
Author :
Hirata, Shinnosuke ; Tamamura, Kazuki ; Kojima, C.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Volume :
23
Issue :
12
fYear :
1987
Firstpage :
627
Lastpage :
628
Abstract :
Single-mode oscillation was obtained by introducing a ¿/4-shifted, double window structure into DFB lasers fabricated by two-step MOCVD. The resulting ¿/4-shifted laser produced Bragg oscillation and was very stable up to 10 mW under CW conditions.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser cavity resonators; optical communication equipment; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 10 mW; AlGaAs-GaAs; Bragg oscillation; CW conditions; DFB lasers; double window structures; optical communication equipment; semiconductor lasers; single mode oscillation; two-step MOCVD; ¿/4 shifted configuration;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870449
Filename :
4257782
Link To Document :
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