Title :
Defect structure of high resistive CdTe:In prepared by vertical gradient freeze method
Author :
Franc, J. ; Babentsov, V. ; Fiederle, M. ; Belas, E. ; Grill, R. ; Benz, K.W. ; Höschl, P.
Author_Institution :
Fac. of Math. & Phys., Charles Univ., Prague, Czech Republic
fDate :
6/1/2004 12:00:00 AM
Abstract :
High resistive and photosensitive CdTe doped with In aimed for fabrication of X- and gamma-ray detectors was produced by Vertical Gradient Freeze method. A complex investigation of defects and compensation by a number of optical and photoelectrical mapping methods was performed. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of In, and related complexes as well as native defects (Cd vacancy and its complexes) is discussed.
Keywords :
X-ray detection; cadmium compounds; defect states; gamma-ray detection; indium; photoelectricity; semiconductor counters; vacancies (crystal); Cd vacancy; CdTe:In; X-ray detector; defect levels; defect structure; energy levels; gamma-ray detector; high resistive CdTe:In; optical mapping method; photoelectrical mapping method; photosensitive CdTe:In; recombination process; self-compensation; semiinsulating CdTe; vertical gradient freeze method; Chemicals; Conductivity; Crystals; Electrons; Gamma ray detectors; Impurities; Indium; Photoconductivity; Photoluminescence; Physics; Defect levels; self-compensation; semiinsulating CdTe;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.829658
