Defect structure of high resistive CdTe:In prepared by vertical gradient freeze method

Author

Franc, J. ; Babentsov, V. ; Fiederle, M. ; Belas, E. ; Grill, R. ; Benz, K.W. ; Höschl, P.

Author_Institution

Fac. of Math. & Phys., Charles Univ., Prague, Czech Republic

Volume

51

Issue

3

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

1176

Lastpage

1181

Abstract

High resistive and photosensitive CdTe doped with In aimed for fabrication of X- and gamma-ray detectors was produced by Vertical Gradient Freeze method. A complex investigation of defects and compensation by a number of optical and photoelectrical mapping methods was performed. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of In, and related complexes as well as native defects (Cd vacancy and its complexes) is discussed.

Keywords

X-ray detection; cadmium compounds; defect states; gamma-ray detection; indium; photoelectricity; semiconductor counters; vacancies (crystal); Cd vacancy; CdTe:In; X-ray detector; defect levels; defect structure; energy levels; gamma-ray detector; high resistive CdTe:In; optical mapping method; photoelectrical mapping method; photosensitive CdTe:In; recombination process; self-compensation; semiinsulating CdTe; vertical gradient freeze method; Chemicals; Conductivity; Crystals; Electrons; Gamma ray detectors; Impurities; Indium; Photoconductivity; Photoluminescence; Physics; Defect levels; self-compensation; semiinsulating CdTe;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.829658

Filename

1312038